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Characterization Optical component characterization

Wafer-level testing

Probe stations for the testing of passive and active optical components on wafer- and chip-level.

Details

Location: VTT, Espoo
Contact person: Antti Brunström (Espoo)
Wavelength: NIR (900 nm – 1600 nm)
Info:

Services at VTT in Espoo (Contact person Antti Brunström)

SemiProbe PS4L FA8

An automatic wafer probing platform capable of handling wafer diameters from 100 mm to 200 mm. It is extended with a Material Handling Unit (MHU). Vertical optical and optoelectronic measurements are supported over the 1240 nm to 1630 nm wavelength range, and capabilities are planned to be extended to wafer-level edge coupling during 2026.

Key components:

  • Hexapods
    • Coarse positioning : x = 13 mm, y = 32 mm and z = 17 mm
    • Fine positioning: 100 x 100 x 100 μm in 0.3/2.5 nm minimum step (open-loop/closed loop, respectively)
  • Material handling unit
    • Two cassettes
  • Thermal chuck from ambient to 200 ºC
  • Single fiber arm with adjustable incident angle, 10-90º

Can be combined with electrical sourcing and measurement equipment listed in Characterization of waveguide components.

MPI TS2000-D probe station

A semi-automatic probe station with dark box capabale of handling wafer diameters from 100 to 200 mm.

Key components

  • Hexapods
    • Positioning: 20 mm in x, y and z in 1 nm minimum step (closed loop)
  • Single fiber arm
    • Adjustable incident angle
    • Chip-level edge coupling

Can be combined with electrical sourcing and measurement equipment listed in Characterization of waveguide components.

 

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