Thin film deposition and epitaxy

Thin film deposition enables the development of advanced technologies by precisely depositing thin layers of materials onto solid surfaces through different techniques. Atomic Layer Deposition (ALD) operates through a sequential, self-limiting reaction mechanism that allows for the controlled growth of thin films with atomic-level accuracy, resulting in conformal and uniform coatings with exceptional control over film composition and thickness. Molecular Beam Epitaxy (MBE) is crystalline thin film deposition method used for the fabrication of semiconductor devices that operates under ultra-high vacuum conditions and involves the evaporation of elemental or molecular species from separate sources allowing for growing atomic layers with well-defined interfaces.