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Fabrication Micro- and Nanopatterning

Reactive plasma etcher with fluorine chemistry (RIE)

RIE Plasmalab 100 (Oxford Plasma Technology) is a RIE system (Reactive-Ion Etching) mainly used for dielectric and polymer dry etching using various soft and hard masks. There is also a separate (ICP-RIE) unit for processes where improved control of the process parameters is required (in ICP-RIE the plasma generation and the electric field accelerating the ions are separated).

Details

Location: Tampere University (TAU), Tampere
Contact person: Jukka Viheriälä (Tampere)
Info:

System Description

RIE Plasmalab 100 (Oxford Plasma Technology) is a RIE system (Reactive-Ion Etching) we use mainly for dielectric and polymer dry etching using various soft and hard masks. We also have a separate (ICP-RIE) unit for processes where improved control of the process parameters is required (in ICP-RIE the plasma generation and the electric field accelerating the ions are separated). The basic division of use between the RIE and ICP systems is that processes requiring fluorine based gasses are done with RIE and processes using chlorine based gasses are to be made with ICP to avoid chamber contamination.

The system has a separate load lock, through which the samples are transported into the process chamber, which allows the chamber to be kept in constant vacuum. The chamber has no temperature control (ICP-RIE is controlled through a liquid nitrogen supply). The system also includes a laser interferometry system for in-situ etch depth monitoring. The system is controlled through an intuitive GUI, similar to the ones in ICP-RIE and PECVD systems.

Spesifications

The system specifications and allowed materials are stated below.

Before proceeding with a process, consult the equipment responsible on the material compatibility with the system and creation of a new recipe.

  • The compatibility of the intended process and materials with the system has to check to avoid system contamination or breakdown.
  • New recipies can be created only by trained personel. Wrong recipe might not be fuctional or could damage the sample or the system.
  • Any non-standard process needs an approval from the equipment responsible.
    • Standard process refers to processes used standardly in our facilities. Processes previously not used in our enviroment fall to the cathegory of non-standard.

Operating parameter ranges

Maximum sample size 6″ wafer (for large wafer plasma uniformity might decrease)
Total gas flow 10 – 150 sccm
Pressure 5 – 100 mTorr (below 50 mTorr plasma striking possibly difficult)
RF power 20 – 300 W
Temperature No temperature control
Etch duration  Standard etch duration: 0-30 min. For significantly longer etches, consult the equipment responsible.

Compatible materials

If you wish to use materials not listed, consult the equipment responsible.

Process gasses O2    |    CHF3    |    H2    |    Ar    |   SiCl4    |    SF6
Allowed materials for etching
  • SiO2, SiN, Al2O3, ITO
  • Photoresists (non-silicone): AZxxxx
  • NIL resists: mr NIL 210, PMGI
  • EBL resists: PMMA
  • Other polymers: BCB, Ormocers
  • Semiconductors: Si
  • Metal: Ti, Au, Ag
Allowed mask materials
  • Photoresists (non-silicone): AZxxxx
  • NIL resists: mr NIL 210, PMGI
  • EBL resists: PMMA
  • Ni, Cr
  • SiO2, SiN, Al2O3
Forbidden materials for etching
  • III-V semiconductors
Allowed processes
  • Etching of polymers, dielectrics, titanium and silicon using F-based and O-based chemistries. Sputtering of gold and other non-volatile metals.
  • No Cl-based etching

Training

The training of all new users is conducted by the equipment responsible. Independent training or use of the system is not allowed unless otherwise agreed with the equipment responsible. Training is also required for personel that has used similar systems in other facilities.

Requirements:

For a user to receive training in the use of the RIE system, they a required to have:

  • Frequent and present need
    • The system should be used regularly and taken into use soon after training in order to maintain the level of competence of the operator
  • Plan of the intended use: etched materials, mask materials, process gasses and parameters
  • Understanding of the basic principles of plasma etching processes  (be aware of the involved process mechanisms)
  • Complete training in the safe and proper use of the system will require at least a couple of sessions (estimation 3+1 h) (not necessarily back-to-back) so the need for the training should be carefully considered and sufficient time allotted in schedule. If there are no other experienced users in the group who can help with the daily processes, further need of assistance should be discussed with the equipment responsible.

Training requests:

Contact the equipment responsible (Heidi Tuorila), email prefered.

  • Provide the information stated in the requirements.
  • Make the initial inquiry well in advance.
    • Depending on the equipment availability and and the schedule of the equipment responsible there might be some delay in training.

Process and system problems

In case of irregularities in the system operations, stop using the system and contact the equipment responsible.

In case of imminent/catastrophic danger/system failure contact Laboratory Chief (Ilkka Hirvonen).

Standard operating procedure (SOP) for the system can be found at the end of this page. Note that the document is intended to be used as a support and it does not replace face-to-face training.

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