We host five molecular beam epitaxy (MBE) systems equipped for the growth of all common GaAs, InP, and GaSb-based materials as well as more exotic III-V compounds.
Details
Location:
Tampere University (TAU), Tampere
Contact person:
Antti Tukiainen (Tampere)
Info:
- VEECO Gen20 MBE: MBE system with capability of growing on 4-inch substrate specialized in synthesis of III-N/P/Sb/As compounds and multi-junction solar cells
- VG Semicon V80 10-1 MBE: 10-ports MBE system with capability of growing on 3-inch substrate specialized in synthesis of InP and GaAs based materials.
- VG Semicon V80 10-2 MBE: 10-ports MBE system with capability of growing on 3-inch substrate specialized in synthesis of III-Bi/N/Sb/As (mid-IR optoelectronics).
- VG Semicon V90 MBE: 10-ports MBE system with capability of growing on 4-inch (also 3 x 2-inch) substrate specialized in synthesis of InP and GaAs (generic laser diode research, quantum dots).
- VG Semicon V80 AsN MBE: 8-ports MBE system with capability of growing on 2 inch substrate.
See also here Joonas Hilska’s thesis on Novel GaSb-based light sources promise advances in sensing and quantum cryptography
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